Intelligent power device using poly-Si sandwiched wafer bonding technique

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1995, Pages 58-62

  Kobayashi, Ken ya ^a   Hamajima, Tomohiro ^a   Kikuchi, Hiroaki ^a   Takahashi, Mitsuasa ^a   Arai, Kenichi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

INTELLIGENT POWER DEVICE; ISOLATION CAPABILITIES; ISOLATION STRUCTURE; POLYSILICON SANDWICHED WAFER BONDING;

POWER ELECTRONICS;

EID: 0029178285     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)