Analysis of diode recovery phenomena using transient analysis method for semiconductor devices coupled with external circuit

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1995, Pages 396-399

  Mishima, A ^a   Kimura, S ^a   Mori, M ^a   Kozaka, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COUPLED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTOR DEVICE MODELS; SWITCHING;

REVERSE RECOVERY PROCESS; TRANSIENT ANALYSIS;

SEMICONDUCTOR DIODES;

EID: 0029178205     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)