Arbitrary phase shift by selective MOVPE growth and its application to 1.5μm λ/4 phase-shifted InGaAs/lnGaAsP MQW-DFB-LDs

Electronics Letters

Volumn 30, Issue 25, 1994, Pages 2130-2131

  Shim, J I ^a   Kitamura, M ^b  

^a Hanyang University   (South Korea)

^b NEC CORPORATION   (Japan)

Author keywords

Distributed feedback lasers; Semiconductor quantum wells; Vapour phase epitaxial growth

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; ELECTRON TRANSITIONS; LASER TUNING; LIGHT PROPAGATION; PHASE SHIFT; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; VAPOR PHASE EPITAXY;

ARBITRARY PHASE SHIFT; METAL ORGANIC VAPOR PHASE EPITAXY;

QUANTUM WELL LASERS;

EID: 0028768693     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19941477     Document Type: Article

References (8)

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