Photopumped room-temperature edge- and vertical-cavity operation of AlGaAs-GaAs-InGaAs quantum-well heterostructure lasers utilizing native oxide mirrors

Applied Physics Letters

Volumn 65, Issue 6, 1994, Pages 740-742

  Ries, M J ^a   Richard, T A ^a   Maranowski, S A ^a   Holonyak Jr , N ^a   Chen, E I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; MIRRORS; OXIDATION; OXIDES; PUMPING (LASER); REFLECTOMETERS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

DISTRIBUTED BRAGG REFLECTING MIRRORS; PULSED PHOTOPUMPED OPERATION; QUANTUM WELL HETEROSTRUCTURE; REFLECTANCE MEASUREMENT; SELECTIVE LATERAL OXIDATION; VERTICAL CAVITY LASERS;

SEMICONDUCTOR LASERS;

EID: 0028768364     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.112216     Document Type: Article

References (15)