Wide-handwidth distributed Bragg reflectors using oxide/GaAs multilayers

Electronics Letters

Volumn 30, Issue 14, 1994, Pages 1147-1149

  MacDougal, M H ^a   Zhao, H ^a   Dapkus, P D ^a   Ziari, M ^a   Steier, W H ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

Distributed Bragg reflector lasers; Vertical cavity surface emitting lasers

Indexed keywords

ELLIPSOMETRY; EPITAXIAL GROWTH; LIGHT MEASUREMENT; LIGHT REFLECTION; OPTICAL DESIGN; OPTICAL MULTILAYERS; OXIDES; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

DISTRIBUTED BRAGG REFLECTOR LASERS; PEAK REFLECTIVITY; REFLECTIVITY BANDWIDTH; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0028767530     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940754     Document Type: Article

References (12)

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