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Volumn 72, Issue 10, 1994, Pages 1514-1517

Absorption and emission of light in nanoscale silicon structures

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CRYSTAL STRUCTURE; ELECTRON TRANSITIONS; ELECTRONS; ENERGY GAP; FOURIER TRANSFORMS; LIGHT ABSORPTION; LIGHT EMISSION; MATHEMATICAL MODELS; PHONONS; POROUS MATERIALS;

EID: 0028767142     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.72.1514     Document Type: Article
Times cited : (398)

References (27)
  • 8
    • 84927895322 scopus 로고    scopus 로고
    • and references therein. The mode energies and relative intensities in bulk Si are 57.5 meV (1.00), 55.3 meV (0.15), and 18.2 meV (0.03).
  • 10
    • 84927895321 scopus 로고    scopus 로고
    • Microcrystalline Semiconductors: Materials Sciences and Devices (Ref. [2]), p. 143.
  • 14
    • 84927895319 scopus 로고    scopus 로고
    • A preliminary discussion of the zero-phonon emission was presented in M. S. Hybertsen, Light Emission from Silicon, edited by S. S. Iyer, L. T. Canham, and R. T. Collins (Materials Research Society, Pittsburgh, 1992), p. 179.
  • 27
    • 84927895318 scopus 로고    scopus 로고
    • F. Koch, V. Petrova-Koch, T. Muschik, A. Nikolov, and V. Gavrilenko, in Microcrystalline Semiconductors: Materials Sciences and Devices (Ref. [2]), p. 197; F. Koch, V. Petrova-Koch, and T. Muschik (to be published).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.