Photogenerated carrier sweep-out times in strained InxGa1-xAs/lnAl1-yAs quantum well modulators

Electronics Letters

Volumn 30, Issue 5, 1994, Pages 405-406

  Moss, D J ^a   Ido, T ^a   Sano, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

Electro absorption modulators; Optical modulation

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; FREQUENCY RESPONSE; LIGHT ABSORPTION; LIGHT MODULATION; PARAMETER ESTIMATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

ELECTROABSORPTION MODULATORS; MULTIQUANTUM WELL MODULATORS; PHOTOGENERATED CARRIER SWEEPOUT TIMES;

LIGHT MODULATORS;

EID: 0028762633     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940281     Document Type: Article

References (12)

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