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Journal of Crystal Growth

Volumn 145, Issue 1-4, 1994, Pages 171-178

Characterization of ordered and disordered Ga0.51In0.49P domains by micro Raman spectroscopy

(8) Krost, A a Esser, N a Selber, H a Christen, J a Richter, W a Bimberg, D a Su, L C b Stringfellow, G B b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b UNIVERSITY OF UTAH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; COMPOSITION EFFECTS; CRYSTAL LATTICES; ELECTRONIC PROPERTIES; ENERGY GAP; LATTICE VIBRATIONS; METALLORGANIC VAPOR PHASE EPITAXY; ORDER DISORDER TRANSITIONS; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM INDIUM PHOSPHIDE;

SEMICONDUCTOR GROWTH;

EID: 0028762137 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(94)91046-4 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.