SCOPUS 정보 검색 플랫폼

Volumn 145, Issue 1-4, 1994, Pages 462-467

Electrical characterization of semi-insulating metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation

(2) Huang, J W a Kuech, T F a

a UNIVERSITY OF WISCONSIN MADISON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CARRIER CONCENTRATION; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

DIETHYL ALUMINUM ETHOXIDE; SEMI INSULATING OXYGEN DOPED GALLIUM ARSENIDE;

SEMICONDUCTOR GROWTH;

EID: 0028761969 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(94)91092-8 Document Type: Article

Times cited : (4)

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