Low-pressure metalorganic vapor phase epitaxy of ZnSe-based light emitting diodes

Journal of Crystal Growth

Volumn 145, Issue 1-4, 1994, Pages 918-923

  Stanzl, H ^a   Wolf, K ^a   Hahn, B ^a   Gebhardt, W ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL REACTORS; CURRENT VOLTAGE CHARACTERISTICS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; X RAY CRYSTALLOGRAPHY;

ZINC SELENIDE BASED LIGHT EMITTING DIODES;

SEMICONDUCTOR GROWTH;

EID: 0028761943     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)91164-9     Document Type: Article

References (12)