Formation of coherently strained self-assembled InP quantum islands on InGaP/GaAs(001)

Journal of Crystal Growth

Volumn 145, Issue 1-4, 1994, Pages 721-727

  DenBaars, S P ^a   Reaves, C M ^a   Bressler Hill, V ^a   Varma, S ^a   Weinberg, W H ^a   Petroff, P M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES; SURFACES;

INDIUM GALLIUM PHOSPHIDE; QUANTUM ISLANDS;

SEMICONDUCTOR GROWTH;

EID: 0028761895     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)91133-9     Document Type: Article

References (11)

1. Quantum well lasers--Gain, spectra, dynamics
2. Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy