1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 145, Issue 1-4, 1994, Pages 249-255

  Suzuki, M ^a   Aoki, M ^a   Tsuchiya, T ^a   Taniwatari, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SILICA;

INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE QUANTUM WELLS; QUANTUM ENERGY TUNING;

SEMICONDUCTOR GROWTH;

EID: 0028761883     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)91059-6     Document Type: Article

References (23)

1. New photonic device integration by selective-area MOVPE and its application to optical modulator/laser integration (invited paper)
2. Proc. 4th IC-IPRM '92
3. Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substrates
4. In situ definition of semiconductor structures by selective area growth and etching
5. Proc. 11th Record of Alloy Semiconductor Physics and Electronics Symp.
6. Proc. IC-SSDM '93