Photoluminescence properties of CuInSe2 grown by molecular beam epitaxy

Solar Energy Materials and Solar Cells

Volumn 35, Issue C, 1994, Pages 141-147

  Niki, Shigeru ^a   Makita, Yunosuke ^a   Yamada, Akimasa ^a   Obara, Akira ^a   Igarashi, Osamu ^a   Misawa, Syunji ^a   Kawai, Michihiro ^b   Nakanishi, Hisayuki ^b   Taguchi, Yutaka ^c   Kutsuwada, Noboru ^c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c NIPPON INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; PHOTOVOLTAIC CELLS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILM DEVICES;

COPPER INDIUM SELENIUM THIN FILMS; EPITAXIAL FILMS;

SOLAR CELLS;

EID: 0028761514     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(94)90133-3     Document Type: Article

References (10)

1. Raman spectra of CuInSe2
2. Photoluminescence study of Si1−xGex/Si heterostructures grown by molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition