Surface microstructure of CIS thin films produced by rapid thermal processing

Solar Energy Materials and Solar Cells

Volumn 35, Issue C, 1994, Pages 129-139

  Riedl, W ^a   Rimmasch, J ^a   Probst, V ^a   Karg, F ^a   Guckenberger, R ^b  

^a SIEMENS AG   (Germany)

^b MAX PLANCK INSTITUTE OF BIOCHEMISTRY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; FERMI LEVEL; FILM PREPARATION; LEAKAGE CURRENTS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILM DEVICES;

CONDUCTION TYPE; POLYCRYSTALLINE COPPER INDIUM SELENIUM THIN FILMS; RAPID THERMAL PROCESSING (RTP); SCANNING TUNNELING SPECTROSCOPY; TUNNELING CURRENT;

SOLAR CELLS;

EID: 0028761510     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(94)90132-5     Document Type: Article

References (10)

1. Atomic Level Studies: Nanoprocessing and Nanocharacterization of Defects in CuInSe2
2. Specific atom imaging, nanoprocessing, and electrical nanoanalysis with scanning tunneling microscopy