The growth of InAs1-xSbx/InAs strained-layer superlattices by metalorganic chemical vapot deposition

Journal of Crystal Growth

Volumn 137, Issue 1-2, 1994, Pages 231-234

  Biefeld, R M ^a   Baucom, K C ^a   Kurtz, S R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; MATHEMATICAL MODELS; OPTICAL PROPERTIES; PRESSURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; THERMAL EFFECTS; THERMODYNAMICS;

INDIUM ARSENIC ANTIMONIDE; INDIUM ARSENIDE; OPTICAL MICROSCOPY; SECONDARY ION MASS SPECTROSCOPY; STRAINED LAYER SUPERLATTICES; X RAY DIFFRACTION;

CRYSTAL GROWTH;

EID: 0028760310     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)91276-9     Document Type: Article

References (10)

1. Substrate orientation and surface morphology improvements for InSb grown by metalorganic chemical vapor deposition