Optimized Ge channel profiles for VLSI compatible Si/SiGe p-MOSFET's

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 369-372

  Voinigescu, S P ^a   Salama, C A T ^a   Noel, J P ^a   Kamins, T I ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INTEGRATED CIRCUIT LAYOUT; OPTIMIZATION; PROTONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TRANSCONDUCTANCE; VLSI CIRCUITS;

CUT OFF FREQUENCY; GRADED TRIANGULAR GERMANIUM PROFILES; HOLE AND CARRIER MOBILITY; MODULATION DOPED FETS;

MOSFET DEVICES;

EID: 0028758016     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)