A Design Technique for a 60 GHz-Bandwidth Distributed Baseband Amplifier IC Module

IEEE Journal of Solid-State Circuits

Volumn 29, Issue 12, 1994, Pages 1537-1544

  Shibata, Tsugumichi ^a   Kimura, Hideaki ^a   Imai, Yuhki ^a   Umeda, Yohtaro ^a   Akazawa, Yukio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); COAXIAL CABLES; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD THEORY; ELECTRONICS PACKAGING; FINITE DIFFERENCE METHOD; HIGH ELECTRON MOBILITY TRANSISTORS; MULTICHIP MODULES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THREE DIMENSIONAL; TIME DOMAIN ANALYSIS;

DISTRIBUTED BASEBAND AMPLIFIER; FLAT FREQUENCY; SINGLE CHIP MODULE; THREE DIMENSIONAL STRUCTURE EFFECTS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0028753565     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.340428     Document Type: Article

References (7)

1. N. Ishihara, E. Sano, Y. Imai, H. Kikuchi, and Y. Yamane, “A design technique for a high-gain, 10-GHz class-bandwidth GaAs MESFET amplifier IC module,” IEEE J. Solid-State Circuits. vol. 27, pp. 554-562, Apr. 1992.
2. Y. Imai, E. Sano, M. Nakamura, N. Ishihara, H. Kikuchi, and T. Ono, “Design and performance of clock-recovery GaAs IC’s for high-speed optical communication systems,” IEEE Trans. Microwave Theory Tech. vol. 41, pp. 745-751, May 1993.
3. M. Togashi, M. Ohhata, K. Murata, H. Kindoh, M. Ino, M. Suzuki, and Y. Yamane, “10-Gb/s GaAs MESFET IC’s for ultra high-speed transmission systems,” Dig. GaAs IC Symp., pp. 49-52, Oct. 1990.
4. H. Ichino, “20-Gb/s digital SSI’s using AlGaAs/GaAs heterojunction bipolar transistors for future optical transmission systems,” IEEE J. Solid-State Circuits, vol. 28, pp. 115-122, Feb. 1993.
5. S. Deibele and J. B. Beyer, “Attenuation compensation in distributed amplifier design,” IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1425-1433, Sept. 1989.
6. Y. Umeda, T. Enoki, K. Arai, and Y. Ishii, “Silicon nitride passivated ultra low noise InAlAs/InGaAs HEMT’s with n+-InGaAs/n+-InAlAs cap layer,” IEICE Trans. Electron., vol. E-75C, pp. 649-655, June 1992.
7. T. Shibata and H. Kimura, “Computer-aided engineering for microwave and millimeter-wave circuits using the FD-TD technique of field simulations,” Int. J. Microwave and MM-Wave Comp.-Aided Eng., vol. 3, pp. 238-250, July 1993.