A CMOS 18 THzΩ 240 Mb/s Transimpedance Amplifier and 155 Mb/s LED-Driver for Low Cost Optical Fiber Links

IEEE Journal of Solid-State Circuits

Volumn 29, Issue 12, 1994, Pages 1552-1559

  Ingels, Mark ^a   der Plas, Geert Van ^a   Crols, Jan ^a   Steyaert, Michel ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BROADBAND NETWORKS; DIGITAL SIGNAL PROCESSING; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; LIGHT EMITTING DIODES; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL INTERCONNECTS; OPTICAL LINKS; OPTICAL VARIABLES MEASUREMENT; SIGNAL RECEIVERS; VOICE/DATA COMMUNICATION SYSTEMS;

CURRENT STEERING TRANSISTOR; DRIVER CIRCUITS; MONOLITHIC INTEGRATION; OPTICAL RECEIVER; TRANSIMPEDANCE AMPLIFIER;

CMOS INTEGRATED CIRCUITS;

EID: 0028751246     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.340430     Document Type: Article

References (11)

1. M. Steyaert, W. Bijker, P Vorenkamp, and J. Sevenhans, “ECL-CMOS and CMOS-ECL interface in 1.2 µm CMOS for 150 MHz digital ECL data transmission systems,” IEEE J. Solid-State Circuits, vol. 26, no. 1, pp. 18-24, Feb. 1991.
2. ABB HAFO, 1A277 GaAlAs Light-Emitting Diode (Product Inform.)
3. W. Van Petegem, B. Geeraerts, W. Sansen, and B. Graindourze, “Electrothermal simulation and design of integrated circuits,” IEEE J. Solid-State Circuits, vol. 29, no. 2, pp. 143-146, Feb. 1994.
4. J. Rubinstein, P. Penfield, Jr., and M. A. Horowitz, “Signal delay in RC tree networks,” IEEE Trans. Computer-Aided Design, vol. CAD-2, no. 3, 202-211, July 1983.
5. Micron Semiconductor Limited, MSP IE 200 Silicon Photodiodes for Fibre-Optics. (Product inform.).
6. Ch. Takano, K. Tanaka, A. Okubora, and J. Kasahara, “Monolithic integration of 5-Gb/s optical receiver block for short-distance communication,” IEEE J. Solid-State Circuits, vol. 27, no. 10, pp. 1431-1433, Oct. 1992.
7. P. J-W. Lim, A. Y. C. Tzeng, H. L. Chuang, and S. A. St. Onge, “A 3.3 V monolithic photodetector/CMOS preamplifier for 531 Mbit/s optical data link applications,” ISSCC Dig. Tech. Papers, pp. 96-97, Feb. 1993.
8. G. N. Nasserbakht, J. W. Adkisson, B. A. Wooley, J. S. Harris Jr., and T. I. Kamins, “A monolithic GaAs-on Si receiver front end for optical interconnect systems,” IEEE J. Solid-State Circuits, vol. 28, no. 6, pp. 622-630, June 1992.
9. S. S. Taylor and T. P. Thomas, ' ‘' ‘A 2 pA/√Hz 622 Mb/s GaAs MESFET transimpedance amplifier,” ISSCC Dig. Tech. Papers, pp. 254-255, Feb. 1994.
10. M. Pelgrom, A. Duinmaijer, and A. Welbers, “Matching properties of MOS transistors,” IEEE J. Solid-State Circuits, vol. 24, no. 5, pp. 1317-1323, Oct. 1989.
11. T. Suzaki, M. Soda, T. Morikawa, H. Tezuka, C. Ogawa, S. Fujita, H. Takemura, and T. Tashiro, “Si bipolar chip set for 10-Gb/s optical receiver,” IEEE J. Solid-State Circuits, vol. 27, no. 12, pp. 1781-1785, Dec. 1992.