New approach to implement 0.1 μm MOSFET on thin-film SOI substrate with self-aligned source-body contact

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 657-660

  Chen, Vincent M C ^a   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON TUNNELING; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THIN FILMS; VOLTAGE MEASUREMENT;

FLOATING BODY EFFECT; TUNNELING SOURCE BODY CONTACT;

MOSFET DEVICES;

EID: 0028750685     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)