W/WNx/Poly-Si gate technology for future high speed deep submicron CMOS LSIs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 497-500

  Kasai, K ^a   Akasaka, Y ^a   Nakajima, K ^a   Suehiro, S ^a   Suguro, K ^a   Oyamatsu, H ^a   Kinugawa, M ^a   Kakumu, M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; FABRICATION; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SPUTTERING; TUNGSTEN; TUNGSTEN COMPOUNDS;

TUNGSTEN/TUNGSTEN NITRIDE/POLYSILICON GATE STRUCTURE;

LSI CIRCUITS;

EID: 0028747637     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)