Characterization of bias-stressed carbon-doped GaAs/AlGaAs power heterojunction bipolar transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 187-190

  Henderson, T ^a   Hill, D ^a   Liu, W ^a   Costa, D ^a   Chau, H F ^a   Kim, T S ^a   Khatibzadeh, A ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INORGANIC COMPOUNDS; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE; TUNNELING RECOMBINATION CURRENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0028747577     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)