High Gain Monolithic W-Band Low Noise Amplifiers Based on Pseudomorphic High Electron Mobility Transistors

IEEE Transactions on Microwave Theory and Techniques

Volumn 42, Issue 12, 1994, Pages 2590-2597

  Tu, Der Wei ^a   Duncan, Scott W ^a   Golja, Bogdan ^a   Kane, Brittin C ^a   Svensson, Stefan P ^a   Weinreb, Sander ^a   Byer, Norman E ^a   Eskandarian, A ^b  

^a LOCKHEED MARTIN   (United States)

^b M/A COM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GAIN CONTROL; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO; WAVEGUIDES;

HIGH GAIN MONOLITHIC W-BAND LOW NOISE AMPLIFIERS; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

POWER AMPLIFIERS;

EID: 0028746036     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.339801     Document Type: Article

References (9)

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