Effect of current and voltage stress on the DC characteristics of SiGe-base heterojunction bipolar transistors

IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1994, Pages 209-212

  Liao, Kenneth ^a   Reif, Rafael ^a   Kamins, Theodore I ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; LEAKAGE CURRENTS; PERFORMANCE; RELIABILITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

CURRENT VOLTAGE STRESS; HIGH FORWARD CURRENT; HOMOJUNCTION THEORIES; REVERSE BIAS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0028744030     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)