Transistor Performance and Electron Transport Properties of High Performance InAs Quantum-Well FET's

IEEE Electron Device Letters

Volumn 15, Issue 12, 1994, Pages 489-492

  Zahurak, John K ^a   Rishton, Stephen A ^a   Masselink, W Ted ^c   Iliadis, Agis A ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SYSTEMS ANALYSIS;

GATE LENGTHS; GATE TUNNELING CURRENT; LATTICE MATCHING; QUANTUM WELL THICKNESS; TRANSISTOR TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0028741789     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.338413     Document Type: Article

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