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Volumn 339, Issue , 1994, Pages 209-214
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Comparison of thermal gate oxides on silicon and carbon face p-type 6H silicon carbide
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
CARBON;
CURRENT VOLTAGE CHARACTERISTICS;
DOPING (ADDITIVES);
ELECTRIC PROPERTIES;
ELECTRIC VARIABLES MEASUREMENT;
OXIDES;
QUALITY ASSURANCE;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SILICON CARBIDE;
FLATBAND VOLTAGE SHIFT;
POLYSILICON GATES;
THERMAL GATE OXIDES;
GATES (TRANSISTOR);
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EID: 0028741301
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-339-209 Document Type: Conference Paper |
Times cited : (11)
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References (11)
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