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Volumn 339, Issue , 1994, Pages 209-214

Comparison of thermal gate oxides on silicon and carbon face p-type 6H silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARBON; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; OXIDES; QUALITY ASSURANCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE;

EID: 0028741301     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-339-209     Document Type: Conference Paper
Times cited : (11)

References (11)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.