Impedance characteristics of quantum-well lasers

IEEE Photonics Technology Letters

Volumn 6, Issue 12, 1994, Pages 1421-1423

  Weisser, S ^a   Esquivias, I ^b   Tasker, P J ^a   Ralston, J D ^a   Romero, B ^b   Rosenzweig, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

DIFFERENTIAL DIODE RESISTANCE; ELECTRICAL LASER; FREQUENCY DEPENDENT IMPEDANCE; VOLUMETRIC PHOTON DENSITY;

SEMICONDUCTOR LASERS;

EID: 0028741207     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.392224     Document Type: Article

References (11)

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