FOND (Fully Overlapped Nitride-etch defined Device): A new device architecture for high-reliability and high-performance deep submicron CMOS technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 83-86

  Mieville, J P ^a   Van den Bosch, G ^a   Deferm, L ^a   Bellens, R ^a   Groeseneken, G ^a   Maes, H E ^a   Schoenmaker, W ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; HOT CARRIERS; LITHOGRAPHY; OPTIMIZATION; REACTIVE ION ETCHING; SEMICONDUCTOR JUNCTIONS;

FULLY OVERLAPPED NITRIDE ETCH DEFINED DEVICE (FOND);

MOSFET DEVICES;

EID: 0028737905     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)