0.15 μm CMOS process for high performance and high reliability

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 67-70

  Shimizu, S ^a   Kuroi, T ^a   Kobayashi, M ^a   Yamaguchi, T ^a   Fujino, T ^a   Maeda, H ^a   Tsutsumi, T ^a   Hirose, Y ^a   Kusunoki, S ^a   Inuishi, M ^a   Tsubouchi, N ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COBALT COMPOUNDS; ELECTRODES; GATES (TRANSISTOR); INTERFACES (MATERIALS); ION IMPLANTATION; MASKS; MOSFET DEVICES; OSCILLATORS (ELECTRONIC); PERFORMANCE; RELIABILITY; SEMICONDUCTING SILICON;

CHANNEL IMPLANTATION; JUNCTION CAPACITANCE; RING OSCILLATOR;

CMOS INTEGRATED CIRCUITS;

EID: 0028736933     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)