Enhancement-Mode GaAs MESFET Technology for Low Consumption Power and Low Noise Applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 42, Issue 12, 1994, Pages 2517-2524

  Nakajima, Shigeru ^a   Matsuzaki, Ken ichiro ^a   Otobe, Kenji ^a   Nishizawa, Hideaki ^a   Shiga, Nobuo ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); ION IMPLANTATION; MICROWAVE INTEGRATED CIRCUITS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SIGNAL TO NOISE RATIO;

DEPLETION MODE DEVICES; ENHANCEMENT MODE DEVICES;

MESFET DEVICES;

EID: 0028735674     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.339791     Document Type: Article

References (18)

1. V. Nair, “Low current enhancement mode MMIC's for portable communication applications,” Proc. GaAs IC Symp., 1989, pp. 66–70.
2. P. J. Apostolakis, et al., “Microwave performance of low-power ion-implanted implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applications,” IEEE Microwave Guide Lett., vol. 3, pp. 278–280, Aug. 1993.
3. M. Feng and J. Lasker, “On the speed and noise performance of direct ion-implanted GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. 40, pp. 9–17, Jan. 1993.
4. S. Nakajima, K. Otobe, N. Kuwata, N. Shiga, K. Matsuzaki, and H. Hayashi, “Pulse-doped GaAs MESFET's with planar self-aligned gate for MMIC,” MTT-S Symp. Dig., 1990, p. 1081.
5. F. He Jiodre, M. Lefevbre, G. Salmer, and O. L. El-Sayed, “Two-dimensional simulation of submicrometer GaAs MESFET’s,” IEEE Trans. Electron Devices, vol. 35, p. 824, 1988.
6. P. H. Ladbrook and S. R. Blight, “Low-field low frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent dependent anomalies,” IEEE Trans. Electron. Devices, vol. 35, p. 257, 1988.
7. N. Yokoyama, T. Mimura, M. Fukuta, and H. Ishikawa, “Self-aligned source/drain planar devices for ultrahigh-speed GaAs MESFET VLSI,” Proc. Int. Solid-State Circuit Conf., pp. 218–219, 1981.
8. K. Yamasaki, K. Asai, T. Mizutani, and K. Kurumada, “A self-aligned implantation for n+ layer technology (SAINT) for high-speed GaAs ICs,” Electron. Lett., vol. 18, no. 3, pp. 119–121, 1982.
9. K. Yamasaki, N. Kato, and M. Hirayama, “Buried P-layer SAINT for very high-speed GaAs IC's with submicrometer gate length,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2420–2425, 1985.
10. K. Hosogi, N. Ayaki, T. Kato, Y. Kohno, H. Nakano, et al., “Super low noise self-aligned GaAs MESFET with noise figure of 0.87 dB at 12 GHz,” in MTT-S Dig., 1990, p. 1257.
11. T. Enoki, S. Sugitani, and Y. Yamane, “Characteristics including electron velocity overshoot for 0.1-μm-gate-length GaAs SAINT MESFET’s,” IEEE Trans. Electron. Devices, vol. 37, pp. 935–941, 1990.
12. K. Onodera, K. Nishimura, K. Asai, and S. Sugitani, “High microwave and ultra-low noise performance of fully ion-implanted GaAs MESFET's with Au/WSiN T-shaped gate,” IEEE Trans. Electron. Devices, vol. 40, pp. 18–24, Jan. 1993.
13. K. Onodera, M. Tokumitsu, M. Tomisawa, and K. Asai, “Effects of neutral buried p-layer on high-frequency performance of GaAs-MESFET,” IEEE Trans. Electron. Devices, vol. 38, p. 429, 1991.
14. K. Yamasaki, K. Asai, and K. Kurumada, “GaAs LSI directed MESFET's with self-aligned implantation for N+ layer technology (SAINT), IEEE Trans. Electron. Devices, vol. ED-29, pp. 1772–1777, 1982.
15. T. Tambo, O. Ishikawa, H. Yagita, K. Inoue, and T. Onuma, “Low-noise GaAs MESFET by dummy-gate self-alignment technology,” IEEE GaAs IC Symp. Tech. Dig. 1987, p. 49.
16. S. Asai, N. Goto, M. Kanamori, Y. Tanaka, and T. Furutsuka, “A high performance LDD GaAs MESFET with a refractory metal gate,” 18th Conf. Solid State Device Materials, 1986, pp. 383–386.
17. S. Nakajima, K. Matsuzaki, K. Otobe, H. Nishizawa, and N. Shiga, “Enhancement-mode GaAs MESFET technology for low consumption power and low noise applications,” IEEE MTT-S Symp. Dig., 1994, pp. 1443–1446.
18. A. Cappay, “Noise modeling and measurement techniques,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1–9, Jan. 1988.