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Volumn 42, Issue 12, 1994, Pages 2603-2609
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A V-band High-Efficiency Pseudomorphic HEMT Monolithic Power Amplifier
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC NETWORK PARAMETERS;
GATES (TRANSISTOR);
HETEROJUNCTIONS;
HIGH ELECTRON MOBILITY TRANSISTORS;
PROCESS CONTROL;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DOPING;
SUBSTRATES;
MONOLITHIC POWER AMPLIFIERS;
PRODUCIBILITY;
SCHOTTKY GATES;
POWER AMPLIFIERS;
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EID: 0028734647
PISSN: 00189480
EISSN: 15579670
Source Type: Journal
DOI: 10.1109/22.339803 Document Type: Article |
Times cited : (14)
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References (12)
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