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Volumn 42, Issue 12, 1994, Pages 2603-2609

A V-band High-Efficiency Pseudomorphic HEMT Monolithic Power Amplifier

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK PARAMETERS; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; PROCESS CONTROL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SUBSTRATES;

EID: 0028734647     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.339803     Document Type: Article
Times cited : (14)

References (12)
  • 2
    • 0026940964 scopus 로고
    • V-band high-efficiency monolithic pseudomorphic HEMT power amplifiers
    • Oct.
    • C. K. Pao, et al., “V-band high-efficiency monolithic pseudomorphic HEMT power amplifiers,” IEEE Microwave Guided Wave Lett., vol. 2, pp. 394–396, Oct. 1992.
    • (1992) IEEE Microwave Guided Wave Lett. , vol.2 , pp. 394-396
    • Pao, C.K.1
  • 3
    • 0027682182 scopus 로고
    • High power 0.15 μm V-band pseudomorphic InGaAs- AlGaAs-GaAs HEMT
    • Oct.
    • R. Lai, et al., “High power 0.15 μm V-band pseudomorphic InGaAs- AlGaAs-GaAs HEMT,” IEEE Microwave Guided Wave Lett., vol. 3, pp. 363–365, Oct. 1993.
    • (1993) IEEE Microwave Guided Wave Lett. , vol.3 , pp. 363-365
    • Lai, R.1
  • 4
    • 0026152307 scopus 로고
    • High power V-band pseudomorphic InGaAs HEMTs
    • May.
    • K. L. Tan, et al., “High power V-band pseudomorphic InGaAs HEMTs,” IEEE Electron. Device Lett., vol. 12, pp. 213–214, May 1991.
    • (1991) IEEE Electron. Device Lett. , vol.12 , pp. 213-214
    • Tan, K.L.1
  • 5
    • 0027262861 scopus 로고
    • Ka-band power PHEMT on-wafer characterization using prematched structures
    • June
    • A. K. Sharma, et al., “Ka-band power PHEMT on-wafer characterization using prematched structures,” IEEE MTT-S Symp. Dig., pp. 1343–1346, June 1993.
    • (1993) IEEE MTT-S Symp. Dig. , pp. 1343-1346
    • Sharma, A.K.1
  • 6
    • 0027882047 scopus 로고
    • A20 – 50 GHz MMIC amplifier with 21 dBm output power and its applications as a frequency doubler
    • IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp.
    • H. Kondoh and A. Cognata, “A 20–50 GHz MMIC amplifier with 21 dBm output power and its applications as a frequency doubler,” presented at the 1993 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp., pp. 35–38.
    • (1993) presented at the , pp. 35-38
    • Kondoh, H.1    Cognata, A.2
  • 9
    • 0024176191 scopus 로고
    • V-band GaAs MMIC low noise and power amplifiers
    • Dec.
    • H. L. Hung, et al., “V-band GaAs MMIC low noise and power amplifiers,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1966–1975, Dec. 1988.
    • (1988) IEEE Trans. Microwave Theory Tech. , vol.36 , pp. 1966-1975
    • Hung, H.L.1
  • 11
    • 33747448999 scopus 로고
    • A 0.1 W W-band pseudomorphic HEMT MMIC power amplifier
    • T. Chen, K. Tan, et al., “A 0.1 W W-band pseudomorphic HEMT MMIC power amplifier,” 1992 GaAs IC Symp. Dig., pp. 71–74.
    • (1992) GaAs IC Symp. Dig. , pp. 71-74
    • Chen, T.1    Tan, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.