Cross-sectional transmission electron microscopy observations of c-BN films deposited on Si by ion-beam-assisted deposition

Thin Solid Films

Volumn 253, Issue 1-2, 1994, Pages 72-77

  Yamashita, H ^a   Kuroda, K ^a   Saka, H ^a   Yamashita, N ^b   Watanabe, T ^b   Wada, T ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

Author keywords

Boron nitride; Interfaces; Ion bombardment; Transmission electron microscopy

Indexed keywords

CUBIC BORON NITRIDE; DEPOSITION; DIFFUSION; ELECTRON DIFFRACTION; EVAPORATION; INTERFACES (MATERIALS); ION BOMBARDMENT; IONS; SILICON WAFERS; STRUCTURE (COMPOSITION); SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CUBIC BORON NITRIDE FILMS; ELECTRON DIFFRACTION PATTERN; HIGH RESOLUTION ELECTRON MICROGRAPH; ION BEAM ASSISTED DEPOSITION; ION BEAM DYNAMIC MIXING; IRRADIATING NITROGEN;

SEMICONDUCTING FILMS;

EID: 0028732829     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(94)90297-6     Document Type: Article

References (13)

1. Formation of Cubic Boron Nitride Films by Boron Evaporation and Nitrogen Ion Beam Bombardment
2. Formation of cubic boron nitride films by arc-like plasma-enhanced ion plating method
3. Preparation of Cubic Boron Nitride Films by RF Sputtering
4. Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
5. Formation of cBN films by ion beam assisted deposition
6. Adhesion and structure of c-BN films produced by ion-beam-assisted deposition