New structure of acoustic charge transport devices using GaAs epitaxial films grown on Si substrates

Proceedings of the IEEE Ultrasonics Symposium

Volumn 1, Issue , 1994, Pages 103-108

  Ohmori, K ^a   Sato, K ^a,a   Togura, K ^a   Sugai, K ^a   Minagawa, S ^a  

^a CLARION CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PROPERTIES; ACOUSTIC RESONATORS; ACOUSTIC SURFACE WAVE DEVICES; CHARGE TRANSFER; EPITAXIAL GROWTH; FILM GROWTH; FREQUENCY RESPONSE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

ACOUSTIC CHARGE TRANSPORT DEVICES; SAW EXCITATION; SAW RESONATOR;

ACOUSTIC DEVICES;

EID: 0028731563     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)