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Volumn 1, Issue , 1994, Pages 64-68
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Precise model for the DC and transient characteristics of BJTs
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BIPOLAR TRANSISTORS;
CHARGE CARRIERS;
ELECTRIC CURRENT DISTRIBUTION;
ELECTRIC NETWORK ANALYSIS;
PARTIAL DIFFERENTIAL EQUATIONS;
POWER ELECTRONICS;
PRODUCT DESIGN;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
THERMAL EFFECTS;
TRANSIENTS;
CHARGE CARRIER DISTRIBUTION;
COLLECTOR RECOMBINATION;
EMITTER RECOMBINATION;
TEMPERATURE DEPENDENCE;
SEMICONDUCTOR DEVICE MODELS;
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EID: 0028728169
PISSN: 02759306
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (6)
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References (6)
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