Polarization control of vertical-cavity surface-emitting lasers by a birefringent metal/semiconductor polarizer terminating a distributed Bragg reflector

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1994, Pages 183-184

  Mukaihara, T ^a   Ohnoki, N ^a   Hayashi, Y ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE; ELECTRIC CURRENTS; ELECTRIC FIELDS; FABRICATION; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

BIREFRINGENT METAL SEMICONDUCTOR POLARIZER; DISTRIBUTED BRAGG REFLECTOR; LASER STRUCTURE; POLARIZATION CONTROLLED VERTICAL CAVITY SURFACE EMITTING LASER; RESONANT CAVITY WAVELENGTH;

SEMICONDUCTOR LASERS;

EID: 0028727546     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)