Single Event Upsets in Gallium Arsenide Dynamic Logic

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2244-2251

  Fouts, D J ^a   Weatherford, T ^b   McMorrow, D ^c   Melinger, J S ^c   Campbell, A B ^d  

^a ECE Department   (United States)

^b SFA INC   (United States)

^c NAVAL POSTGRADUATE SCHOOL   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIGITAL INTEGRATED CIRCUITS; ELECTRIC NETWORK TOPOLOGY; FIELD EFFECT TRANSISTORS; FREQUENCY RESPONSE; GATES (TRANSISTOR); IONS; LOGIC CIRCUITS; PHASE MEASUREMENT; RADIATION EFFECTS; SPACE APPLICATIONS; VOLTAGE MEASUREMENT;

CHARGE COLLECTION; DYNAMIC LOGIC; SINGLE EVENT UPSET; TWO PHASE DYNAMIC FIELD EFFECT TRANSISTOR LOGIC CIRCUITS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0028720643     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340571     Document Type: Article

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