Thermally induced change in the profile of GaAs/AlGaAs quantum wells

Materials Science and Engineering B

Volumn 28, Issue 1-3, 1994, Pages 332-336

  Peyre, H ^a   Camassel, J ^a   Gillin, W P ^b   Homewood, K P ^b   Grey, R ^c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Epitaxy of thin films; Gallium arsenide; Optical properties; Thermal diffusion

Indexed keywords

ANNEALING; EXCITONS; FILM GROWTH; MOLECULAR BEAM EPITAXY; MONITORING; OPTICAL PROPERTIES; PROCESSING; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL DIFFUSION IN SOLIDS; THERMAL EFFECTS;

CONCENTRATION DEPENDENT MECHANISM; CONFINEMENT ENERGY; DIFFUSION LENGTH; FICKS SECOND LAW; LOW TEMPERATURE EXCITON REFLECTIVITY SPECTRA; PHOTONIC INTEGRATED CIRCUITS; QUANTUM WELL INTERMIXING; SCHRODINGER EQUATION; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0028715346     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(94)90077-9     Document Type: Article

References (12)

1. Simple analytical method for calculating exciton binding energies in semiconductor quantum wells