Accurate simulation of combined electron and ion irradiated silicon devices for local lifetime tailoring

IEEE International Symposium on Power Semiconductor Devices & ICs

Volumn , Issue , 1994, Pages 265-270

  Vobecky, J ^a   Hazdra, P ^a   Voves, J ^a   Spurny, F ^a   Homola, J ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; ION IMPLANTATION; MONTE CARLO METHODS; OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRON IRRADIATION; ION IRRADIATION; LOCAL LIFETIME TAILORING; THERMAL GENERATION; TRAP DYNAMIC EQUATIONS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0028715091     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)