0.1 μm W-band HEMT production process for high yield and high performance low noise and power MMICs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1994, Pages 325-328

  Biedenbender, M ^a   Lai, R ^a   Lee, J ^a   Chen, S ^a   Tan, K L ^a   Liu, P H ^a   Freudenthal, A ^a   Streit, D C ^a   Allen, B ^a   Wang, H ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERFORMANCE; POWER AMPLIFIERS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE;

HISTOGRAM; LOW NOISE AMPLIFIERS; NOISE FIGURE; RADIO FREQUENCY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0028712745     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)