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Volumn 41, Issue 6, 1994, Pages 1966-1973

Total Dose And Proton Testing Of A Commercial Hgcdte Array

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARRAYS; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; IONIZATION OF SOLIDS; LEAKAGE CURRENTS; MULTIPLEXING EQUIPMENT; PHOTODETECTORS; PROTONS; RADIATION EFFECTS; THERMAL EFFECTS;

EID: 0028712339     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340531     Document Type: Article
Times cited : (2)

References (14)
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    • A cryogenic mixed-signal process for radiation-hardened applications
    • RADECS93, St-Malo, France, September
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    • (1994) IEEE Proceedings , pp. 325-328
    • Van Vonno, N.W.1
  • 4
    • 0026400387 scopus 로고
    • Freeze-out characterization of radiation hardened N+ polysilicon gate CMOS transistors
    • D. C. Pantelalds, D. F. Herntnenway, N. W. Van Vonno and T. J. Sanders, “Freeze-out characterization of radiation hardened N+ polysilicon gate CMOS transistors”, IEEE Trans. on Nuclear Science, vol. NS38(6), pp1289-1296 (1991)
    • (1991) IEEE Trans. on Nuclear Science , vol.NS38 , Issue.6 , pp. 1289-1296
    • Pantelalds, D.C.1    Herntnenway, D.F.2    Van Vonno, N.W.3    Sanders, T.J.4
  • 5
    • 0024167906 scopus 로고
    • Formation of interface traps in MOSFETs during annealing following low temperature irradiation
    • N. S. Saks, R. B. Klein and D. L. Griscom, “Formation of interface traps in MOSFETs during annealing following low temperature irradiation” IEEE Trans. on Nuclear Science, vol. NS35(6), pp1234-1240 (1988)
    • (1988) IEEE Trans. on Nuclear Science , vol.NS35 , Issue.6 , pp. 1234-1240
    • Saks, N.S.1    Klein, R.B.2    Griscom, D.L.3
  • 8
    • 0002772669 scopus 로고
    • Charge generation, transport, and trapping
    • Ed T. P. Ma and P. V. Dressendorfer, Chap. 3 (Wiley-Interscience, New York,)
    • F. B. McLean, H. E. Boesch and T. R. Oldham, “Charge generation, transport, and trapping”, in Ionizing Radiation Effects in Devices and Circuits, Ed T. P. Ma and P. V. Dressendorfer, Chap. 3 (Wiley-Interscience, New York, 1989).
    • (1989) Ionizing Radiation Effects in Devices and Circuits , pp. 3
    • McLean, F.B.1    Boesch, H.E.2    Oldham, T.R.3
  • 11
    • 0025638417 scopus 로고
    • Degradation mechanisms of gamma irradiated LW1R HgCdTe photovoltaic detectors
    • G. Sarusi, D. Eger, A. Zemel, N. Mainzer, R. Goshen and E. Weiss, “Degradation mechanisms of gamma irradiated LW1R HgCdTe photovoltaic detectors”, IEEE Trans. on Nuclear Science, vol. NS37(6), pp2042-2049 (1990).
    • (1990) IEEE Trans. on Nuclear Science , vol.NS37 , Issue.6 , pp. 2042-2049
    • Sarusi, G.1    Eger, D.2    Zemel, A.3    Mainzer, N.4    Goshen, R.5    Weiss, E.6
  • 12
    • 84911334172 scopus 로고
    • Laser induced effects in HgCdTe photovoltaic devices
    • R. DeWames, J. Bajaj, E. S. Yao and G. M. Williams, “Laser induced effects in HgCdTe photovoltaic devices”, J. Vac. Sci, Tchnol, vol. A7(2), pp536-543 (1989).
    • (1989) J. Vac. Sci, Tchnol , vol.A7 , Issue.2 , pp. 536-543
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  • 13
    • 0003412161 scopus 로고
    • Biersack and
    • (Pergamon Press, Oxford), PC version developed by J. P. Biersack and J. F. Ziegler, IBM Research, York Town, NY, U.S.A.
    • J. F. Ziegler, J. P. Biersack and U. Littmark, The Stopping and Range of Ions in Solids, (Pergamon Press, Oxford, 1985), PC version developed by J. P. Biersack and J. F. Ziegler, IBM Research, York Town, NY, U.S.A.
    • (1985) The Stopping and Range of Ions in Solids
    • Ziegler, J.F.1    Biersack, J.P.2    Littmark, U.3
  • 14
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    • Radiation effects in microelectonics
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.