Temperature and Angular Dependence of Substrate Response in SEGR

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2216-2221

  Mouret, I ^a   Allenspach, M ^a   Schrimpf, R D ^a   Brews, J R ^a   Galloway, K F ^a   Calvel, P ^b  

^a UNIVERSITY OF ARIZONA   (United States)

^b THALES ALENIA SPACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTATIONAL METHODS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); IONS; MOS DEVICES; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; SUBSTRATES; THERMAL EFFECTS; TRANSIENTS;

HEAVY IONS; HOLE MOBILITY; SINGLE EVENT GATE RUPTURE;

MOSFET DEVICES;

EID: 0028710492     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340565     Document Type: Article

References (8)

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3. J.R. Brews, M. Allenspach, R.D. Schrimpf, K.F. Galloway, J.L. Titus, and C.F. Wheatley, “A Conceptual Model of Single-Event Gate Rupture in Power MOSFETs,” IEEETrans. Nucl. Sci., vol. 40, pp. 1959–1966, 1993.
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5. SILVACO International, ATLAS II, 2D Device Simulation Framework, User Manual, Santa Cla r a, July 1993.
6. M. Allenspach, J.R. Brews, I. Mouret, R.D. Schrimpf, and K.F. Galloway, “Evaluation of SEGR Threshold in Power MOSFETs,” presented at the IEEE NSREC Conference, 1994.
7. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag Wien New York, pp. 110–112, 1984.
8. J.W. Slotboom, G. Streutker, M.J. van Dort, P.H. Woerler, A. Pruijmboom, D.J. Gravesteijn, “Non-local Impact Ionization in Silicon Devices,” 1991 IEDM Techn. Digest, pp. 127–130, 1991.