Comparative study of physical and subcircuit models for MOS-gated power devices

IEEE International Symposium on Power Semiconductor Devices & ICs

Volumn , Issue , 1994, Pages 315-320

  Andersson, M ^a   Gronlund, M ^a   Kuivalainen, P ^a   Pohjonen, H ^a  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; EQUIVALENT CIRCUITS; INTEGRATED CIRCUITS; MODELS; MOSFET DEVICES; SEMICONDUCTOR DOPING;

ELECTRON MOBILITY; INSULATED GATE BIPOLAR TRANSISTORS; OPEN CIRCUIT SIMULATOR; POWER INTEGRATED CIRCUITS; SPACE CHARGE LIMITED CURRENT;

MOS DEVICES;

EID: 0028699158     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)