0.78-0.98μm ridge-waveguide-lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1994, Pages 131-132

  Shima, A ^a   Takemoto, A ^a   Kizuki, H ^a   Karakida, S ^a   Miyashita, M ^a   Nagai, Y ^a   Kamizato, T ^a   Omura, E ^a   Otsubo, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CHLORINE COMPOUNDS; ELECTRIC CURRENT CONTROL; LASER MODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; REFRACTIVE INDEX; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STABILITY;

CHLORIDE; CONFINEMENT LAYER; CURRENT REDUCTION; LATERAL MODE; LINE POWER CURRENT CHARACTERISTICS; RIDGE WAVEGUIDE LASERS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0028698965     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)