Sub-milliampere threshold InGaAs/GaAs/AlGaAs laser array elements by single step growth on nonplanar substrates

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 1994, Pages 18-19

  Zhao, H ^a   MacDougal, M H ^a   Uppal, K ^a   Dapkus, P D ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; EPITAXIAL GROWTH; ETCHING; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ACTIVE REGION WIDTH; METALORGANIC CHEMICAL VAPOR DEPOSITION; SUBMILLIAMPERE THRESHOLD; THRESHOLD CURRENT DEPENDENCE;

SEMICONDUCTOR LASERS;

EID: 0028698832     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)