GaAs BiFET LSI technology

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1994, Pages 47-50

  Ho, W J ^a   Chang, M F ^a   Beccue, S M ^a   Zampardi, P J ^a   Yu, J ^a   Sailer, A ^a   Pierson, R L ^a   Wang, K C ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRONS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; MESFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SHIFT REGISTERS;

BIPOLAR FIELD EFFECT TRANSISTOR; CIRCUIT INTEGRATION LEVEL; DIGITAL RADIO FREQUENCY MEMORY; DRAIN BASE CAPACITANCE; EMITTER CAP LAYER; FLOATING CURRENT SOURCE; FRONT END RECEIVER; MODE COMMUNICATION CIRCUIT; REAL SPACE TRANSFER; THRESHOLD VOLTAGE;

LSI CIRCUITS;

EID: 0028698759     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)