Turn-off analysis of the IGBT used in ZCS mode

IEEE International Symposium on Power Semiconductor Devices & ICs

Volumn , Issue , 1994, Pages 99-104

  Lefebvre, S ^a   Forest, F ^a   Calmon, F ^a   Chante, J P ^a  

^a Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC LOSSES; ELECTRIC WAVEFORMS; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; SWITCHING; WAVEFORM ANALYSIS;

GATE DRIVE; INSULATED GATE BIPOLAR TRANSISTORS; TURN OFF CYCLE; TURN OFF LOSSES; ZERO CURRENT SWITCHING MODE;

BIPOLAR TRANSISTORS;

EID: 0028698639     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)