MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures

Superlattices and Microstructures

Volumn 15, Issue 1, 1994, Pages 15-

  Petroff, P M ^a   DenBaars, S P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

InP InxGa1 xP; InxGa1 xAs GaAs; MBE; MOCVD; Quantum Dots; Self Assembling

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CLADDING (COATING); MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SURFACES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

ATOMIC FORCE MICROSCOPY; QUANTUM DOT ARRAYS; SEMICONDUCTING INDIUM ALUMINUM ARSENIDE; SEMICONDUCTING INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0028697241     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1006/spmi.1994.1004     Document Type: Article

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