Single event burnout of power mosfets caused by nuclear reactions with heavy ions

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2210-2215

  Kuboyama, S ^a   Kanno, T ^a   Hirosh, T ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; BIPOLAR TRANSISTORS; CARRIER CONCENTRATION; ELECTRIC SPACE CHARGE; IONS; NUCLEAR PHYSICS; RADIATION EFFECTS; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; VOLTAGE MEASUREMENT; XENON;

HEAVY IONS; POWER MOSFET DEVICES; SINGLE EVENT BURNOUT;

MOSFET DEVICES;

EID: 0028697028     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340564     Document Type: Article

References (10)

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