Comparative study of integrated current sensors in N-channel IGBTs

IEEE International Symposium on Power Semiconductor Devices & ICs

Volumn , Issue , 1994, Pages 75-80

  Shen, Z ^a   So, K C ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DYNAMIC RESPONSE; MOS DEVICES; PRODUCT DESIGN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THERMODYNAMIC STABILITY;

INSULATED GATE BIPOLAR TRANSISTORS; INTEGRATED CURRENT SENSORS; N CHANNEL;

SENSORS;

EID: 0028695585     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)