SCOPUS 정보 검색 플랫폼

Volumn 29, Issue 24, 1994, Pages 6354-6378

Anisotropic etching of silicon crystals in KOH solution - Part II Theoretical two-dimensional etched shapes: discussion of the adequation of the dissolution slowness surface

(2) Tellier, C R a Brahim Bounab, A a

a Centre National de la Recherche Scientifique (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTALS; DISSOLUTION; KINEMATICS; POTASSIUM COMPOUNDS; SILICON; SOLUTIONS; SURFACE STRUCTURE; VECTORS;

DISSOLUTION SLOWNESS SURFACE; ETCHED SHAPES; POTASSIUM HYDROXIDE; PROFILOMETRY;

ETCHING;

EID: 0028693832 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/BF00353993 Document Type: Article

Times cited : (25)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.