Optimization of resolution-enhanced photolithography for a 256Mb DRAM cell

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 89-90

  Ferguson, R ^a   Ausschnitt, C ^a   Chang, I ^a   Farrell, T ^a   Hashimoto, K ^a   Liebmann, L ^a   Martino, R ^a   Maurer, W ^a   Mii, T ^a   Moy, D ^a   Neisser, M ^a   Nunes, R ^a   Samuels, D ^a   Weed, J ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ERRORS; FABRICATION; LIGHTING; MASKS; PERFORMANCE; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY;

BITLINE; CRITICAL DIMENSION; DEPTH OF FOCUS; RESOLUTION ENHANCEMENT; STORAGE NODE; WORDLINE LEVELS;

PHOTOLITHOGRAPHY;

EID: 0028590420     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)